(PRWEB) May 17, 2002
Fujitsu Microelectronics Europe today introduced the worlds first 64Mbit NOR-Type flash memory devices based on its MirrorFlash architecture, a new multi-bit cell technology.
The four 64Mbit flash memory devices (MBM29LP640UHM, MBM29LP640ULM MBM29LP641UHM, and MBM29LP641ULM) will be the first offered with the MirrorFlash technology – the former two in 56-pin TSOP packages and the latter two in 48-pin TSOP packages. Samples are available now and volume production is expected to commence Q1FY03.
Fujitsus new MirrorFlash devices respond to recent performance improvements in products such as mobile phones, laser printers, and car-navigation systems, which have brought significant increases in program size and data size requirements. This has resulted in demand for flash memory with higher speed, greater density and smaller physical size.
MirrorFlash memory architecture adopts a new multi-bit cell technology incorporating a proprietary cell design. It represents a significant improvement over the existing floating-gate single-bit cell and the more advanced floating-gate multi-bit (multi-level) cell architectures.
Unlike single-bit floating-gate cells, the MirrorFlash architecture traps electrons on two sides of the insulated layer of a single physical cell, forming two electron spots and thereby enabling a cell to store two bits of data. In addition, compared with the single-bit and multi-bit floating gate architectures, the new cells are easier to produce, and cell size can be reduced.
Thus, using stable, existing process technology, it is possible to rapidly achieve higher density comparable to that of chips produced with next-generation process technology. The new architecture is also more reliable than the multi-level cell architecture, because electrons are trapped in a fixed location on the insulating layer.
The new products use a 2-bits-per-cell architecture to achieve quick read performance of 90ns initial access and 25ns page-mode access. These products feature 32-Byte or 16-word simultaneous write-buffer programming for greatly improved write performance. They also offer Hi-ROM security to prevent unauthorised copying, and an accelerator to shorten write times to 60 percent of those previously typical, when loading the system.
These new devices work with the same command sequences as Fujitsus other flash-memory products. Pin-compatible with the companys MBM29DLxxx family, which are designed with the floating gate single bit architecture, customers can make the transition to high-density MirrorFlash products without major design changes. Additionally, there are 128Mbit as well as greater and lower density models for the MirrorFlash family in the pipeline.
In addition to developing MirrorFlash memory family products, Fujitsu will continue to develop faster conventional single-cell floating gate products using the latest process technologies. In this way, Fujitsu will be able to rapidly respond to a wide spectrum of customer application needs with regard to density and performance.
MirrorFlash is a trademark of Fujitsu Limited.
About Fujitsu Microelectronics
Fujitsu Microelectronics Europe is a major supplier of semiconductor products to the European and global market. The company’s main business focus is on providing systems solutions to the networking/telecommunications, mobile communications, automotive and multimedia markets.
Fujitsu offers a broad range of semiconductor devices, including telecommunications ICs, RF devices, MPEG encoders and decoders, microcontrollers and microprocessors, FCRAMs and Flash memory. The company is also a leader in colour plasma display panels. For more information visit Fujitsu Microelectronics Europe’s website at http://www.fme.fujitsu.com.
Main Specifications:
Process technology: 0.23 µm CMOS process
Cell architecture: Single-layer polysilicon gate, MirrorFlash memory cell
Operating voltage: 2.7-3.6 V
Density: 64 Mbit
I/O organization: x8/x16
Sector organization: 64 kByte x 128 (Byte mode); 32 Kword x 128 (word mode)
Sector architecture: Uniform sector
Interface: Common Flash Memory Interface (CFI)
Write-protection installed:
MBM29LP640UHM, MBM29LP641UHM: protection in highest 64 kB (32 Kword) address sector
MBM29LP640ULM, MBM29LP641ULM: protection in lowest 64 kB (32 Kword) address sector
Hi-ROM included
High-speed page-mode times:
Initial access time: max 90 ns/110 ns
Page-mode access time: max 25 ns/30 ns
/CE access time: max 90 ns/110 ns
/OE access time: max 25 ns/30 ns
Low-voltage operation:
Automatic sleep mode included
Standby current: std 1 mA
Operating current, read: avg 50 mA (word-mode, @ 5 MHz)
Operating current, program/erase : avg 30 mA
Program/Erase cycles: min 100,000
Packaging:
MBM29LP640UHM, MBM29LP640ULM: 56-pin plastic TSOP
MBM29LP641UHM, MBM29LP641ULM: 48-pin plastic TSOP
Further information on Fujitsu Microelectronics Europes products is available on our WWW address at: http://www.fme.fujitsu.com
A medium resolution picture relevant to this press release can be found by
following the link: ftp://ftp.jdk.co.uk/Fujitsu/Press/MRPR754.jpg
For a high resolution download option please follow the link:
ftp://ftp.jdk.co.uk/Fujitsu/Press/HRPR754.zip
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Email: [email protected]
Contacts: Jim Bryant
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