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Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology
Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing Silicon Carbide devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.
Key Features
- Rated to 650 V
- Typical RDS(ON) of 15 mΩ
- D2PAK and TO247 Packages
- Industrial and Automotive Grade versions
Additional Features
- Superior characteristics over conventional traditional Silicon technology
- D2PAK 7-lead package
- TO247 4-lead package
- High Junction Temperature Tj = 175C
- 100% UIL Tested
- Pb-Free and RoHS Compliant
- AEC Qualified and PPAP Capable NV-suffix versions available
Read more: ON SEMICONDUCTOR NTX015N065SC1 SILICON CARBIDE MOSFET
