Alliance Memory 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs Offer Low Power Consumption to Increase Battery Life in Mobile Electronics; Devices Combine Low-Voltage Operation of 1.1V With Fast Clock Speeds of 1.6GHz for increased Efficiency and Performance
The 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN provide lower power consumption and faster speeds than the previous-generation LPDDR3 SDRAMs. The devices are available in 200-ball FBGA packages.
The devices offer low-voltage operation of 1.1V/1.8V to prolong battery life in portable electronics for the consumer and industrial markets. For higher efficiency for advanced audio and high-resolution video in embedded applications, the LPDDR4 SDRAMs provide clock speeds of up to 1.6GHz for high transfer rates of 3.2Gbps. For automotive applications, the AEC-Q100 qualified products can operate over an extended temperature range of -40°C to +105°C.
The LPDDR4 SDRAMs are organized as 1 channel (AS4C128M16MD4-062BAN and AS4C256M16MD4-062BAN) and 2 channels (AS4C128M32MD4-062BAN and AS4C256M32MD4-062BAN) per device. Individual channels consist of eight banks of 16 bits. The components feature fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An integrated temperature sensor controls the self-refresh rate.