Summary of DRIVING DOWN THE ON RESISTANCE OF SILICON CARBIDE TRANSISTORS
UnitedSiC has introduced four new silicon carbide (SiC) transistors featuring the world's lowest on-resistance in standard packages, with values under 10 mΩ. Targeting electric vehicle traction and circuit protection, these devices utilize a third-generation platform combining a silicon MOSFET cascode with an integrated SiC JFET. The lineup includes one 650V model (7 mΩ) and three 1200V models (9 mΩ and 16 mΩ), available in TO247 packages as either general-purpose UJ3C or high-performance UF fast-switching variants.
Parts used in the UnitedSiC SiC Transistor Project:
- Silicon Carbide (SiC) Transistors
- TO247 Package
- Silicon MOSFET
- JFET built in Silicon Carbide
- UJ3C General Purpose FET
- UF Fast Switching FET
UnitedSiC has developed silicon carbide transistors in standard packages with the world’s lowest on resistance. Chris Dries, CEO, talks to Nick Flaherty about the significance of the move.
UnitedSiC has launched four silicon carbide SiC transistors with the world’s lowest on resistance RDS(on) to open up new applications.
What we are doing is pretty incredible for the industry with an on resistance on under 10 mΩ in a standard package,” said Chris Dries, CEO of United SIC, talking to eeNews Power. “This is a real milestone for United SiC. The flagship market for us is electric vehicles, particularly in traction, but circuit protection is a new area now enabled by the low rds on,” he said.
Of the four new SiC FET devices, one is rated at 650V with RDS(on) of 7 mΩ and three rated at 1200V with RDS(on) of 9 and 16 mΩ. These are available in a TO247 package with three or four pins.
This is an extension of the third generation platform – the maturation of the process in the fab enables us to go to these large die at high volume” said Dries. “We have created two different types of FET depending on the switching speeds – the UJ3C is general purpose that is easy as a drop in replacement, while the UF fast parts are designed for high performance hard switched.
This comes from the design of the parts, which uses a silicon MOSFET, or cascode, alongside a JFET built in silicon carbide.
Read more: DRIVING DOWN THE ON RESISTANCE OF SILICON CARBIDE TRANSISTORS
- What is the significance of UnitedSiC's new transistor launch?
The launch features the world's lowest on resistance under 10 mΩ in a standard package, enabling new applications like circuit protection. - Can these transistors be used in electric vehicles?
Yes, the flagship market for these devices is electric vehicles, particularly in traction applications. - How many voltage ratings are available for the new SiC FET devices?
There are two voltage ratings available: 650V and 1200V. - What package type do these new devices come in?
The devices are available in a TO247 package with three or four pins. - Does the design use a single component type?
No, the design uses a silicon MOSFET or cascode alongside a JFET built in silicon carbide. - What is the difference between the UJ3C and UF parts?
The UJ3C is a general purpose part easy as a drop in replacement, while the UF fast parts are designed for high performance hard switched applications. - Which generation platform does this project extend?
This comes from the design of the parts which extends the third generation platform.
