Summary of GAN IS AS EASY TO USE AS SILICON: EPC INTRODUCES A 48 V TO 12 V DEMO BOARD
EPC introduces the EPC9157, a compact 300 W DC-DC demo board in a 1/16th brick footprint (33 mm x 22.9 mm x 9 mm). It combines the Renesas ISL81806 80 V dual synchronous buck controller with EPC2218 eGaN FETs to deliver over 95% efficiency for 48 V to 12 V conversion at 25 A. This solution targets high power density needs in data centers and automotive applications, utilizing fast switching GaN technology without requiring external microcontrollers or sense amplifiers.
Parts used in the EPC9157 Demo Board:
- EPC9157 demo board
- Renesas ISL81806 80 V dual synchronous buck controller
- EPC2218 eGaN FETs
EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.
Brick DC-DC converters are widely used in data center, computing, telecommunication and automotive applications, converting a nominal 48 V to a nominal 12 V distribution bus, among other output voltages. The main trend has been towards higher power density. eGaN® FETs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of these leading-edge applications. EPC2218 is the smallest high efficiency 100 V eGAN FET on the market.
Renesas’ ISL81806 is the industry’s first 80V dual-output or two-phase synchronous buck controller with integrated GaN drivers, supporting switching frequencies up to 2 MHz. It uses peak current mode control and generates two independent outputs, or one output with two interleaved phases. It supports current sharing, synchronization for paralleling more controllers and/or more phases, enhanced light load efficiency, and low shutdown current. Protection features include input UVLO, over current, over voltage and over temperature. The ISL81806 can directly drive EPC GaN FETs, ensuring easy design, low component count and low solution cost. The highly integrated ISL81806 reduces BOM cost for GaN solutions because it does not require any microcontroller, current sense amplifiers, or housekeeping power.
Read more: GAN IS AS EASY TO USE AS SILICON: EPC INTRODUCES A 48 V TO 12 V DEMO BOARD
- What is the primary function of the EPC9157 demo board?
It converts a nominal 48 V input to a regulated 12 V output at 25 A. - How efficient is the EPC9157 during operation?
The board achieves greater than 95% efficiency. - What are the physical dimensions of the EPC9157?
It measures 33 mm x 22.9 mm x 9 mm. - Can the ISL81806 controller drive EPC GaN FETs directly?
Yes, the ISL81806 can directly drive EPC GaN FETs. - Does the ISL81806 require a microcontroller for operation?
No, it does not require any microcontroller. - What protection features does the ISL81806 include?
It includes input UVLO, over current, over voltage, and over temperature protection. - What is the maximum switching frequency supported by the ISL81806?
It supports switching frequencies up to 2 MHz. - Are eGaN FETs suitable for data center applications?
Yes, they meet the stringent power density requirements of data centers.
