K857PE Si PIN Photodiode
Vishay Semiconductors K857PE Si PIN Photodiode is a 4-quadrant photodetector with a 1.6mm2/quadrant active area available in a surface-mount package. This photodiode functions in epitaxial technology and offers high photosensitivity. The K857PE pin photodiode operates at -40°C to 110°C temperature range, 20V reverse voltage, and 1nA dark current. This photodiode offers 1.3V maximum forward voltage, 840nm peak sensitivity wavelength, and 30ns rise time and fall time.
Features
- Surface-mount package type
- Epitaxial technology
- AEC-Q101 qualified
- High photosensitivity
Specifications
- 20V reverse voltage
- -40°C to 110°C operating and storage temperature range
- 1nA dark current
- 1.3V maximum forward voltage
- 840nm peak wavelength
- 30ns rise time and fall time
- 260°C soldering temperature
VEMD8081 Silicon PIN Photodiode
Vishay Semiconductors VEMD8081 Silicon PIN Photodiode offers high speed and enhanced sensitivity for visible light. The VEMD8081 Photodiode provides a low profile surface-mount device (SMD), including the chip with a 5.4mm2 sensitive area detecting visible and near-infrared radiation.
The Vishay Semiconductors VEMD8081 Silicon PIN Photodiode features an angle of half sensitivity ±65°, a 350nm to 1100nm range of spectral bandwidth, and a forward voltage of 2.3V to 3.3V. The VEMD8081 Photodiode is designed for high-speed photodetectors and wearables.
Read more: VISHAY SEMICONDUCTORS SI PIN PHOTODIODES
