Summary of BROADCOM AFBR-S4N33C013 IS A SILICON PHOTO MULTIPLIER
The Broadcom AFBR-S4N33C013 is a single silicon photomultiplier designed for ultra-sensitive single-photon detection. Utilizing through-silicon-via technology and a chip-sized package, it features a 3.0 × 3.0 mm² active area with high packing density. The device offers excellent photon detection efficiency and uniformity, making it ideal for detecting low-level pulsed light from Cherenkov or scintillation sources in organic and inorganic materials. It includes a transparent glass protective layer and operates within a wide temperature range while remaining RoHS compliant.
Parts used in the Silicon Photomultiplier Project:
- Broadcom AFBR-S4N33C013 Silicon Photomultiplier
- Through-silicon-via (TSV) technology
- Chip-sized package (CSP)
- Glass protection layer
- Organic plastic scintillator materials
- Inorganic scintillator materials (LSO, LYSO, BGO, NaI, CsI, BaF, LaBr)
The Broadcom® AFBR-S4N33C013 is a single silicon photomultiplier (SiPM) used for ultra-sensitive precision measurement of single photons. The active area is 3.0 × 3.0 mm2.
The high packing density of the single chips is achieved using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.
The AFBR-S4N33C013 SiPM is best suited for the detection of low-level pulsed light sources, especially for the detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This product is lead-free and compliant with RoHS.
Key Features
- High PDE of more than 54% at 420 nm
- Chip-sized package (CSP)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage, 180 mV (3 sigma)
Additional Features
- Excellent uniformity of gain
- With TSV technology (4-side tileable), with high fill factors
- Size 3.14 × 3.14 mm2
- Cell pitch 30 × 30 μm2
- A highly transparent glass protection layer
- Operating temperature range from –40 °C to +85 °C
- RoHS and REACH compliant
Read more: BROADCOM AFBR-S4N33C013 IS A SILICON PHOTO MULTIPLIER
- What is the primary function of the Broadcom AFBR-S4N33C013?
It is used for ultra-sensitive precision measurement of single photons. - How does the product achieve high packing density?
It uses through-silicon-via technology and a chip-sized package. - Can multiple units be tiled together?
Yes, larger areas can be covered by tiling multiple CSPs almost without any edge losses. - What material is used for the protective layer?
A glass highly transparent down to UV wavelengths is used. - Which light sources is this SiPM best suited for detecting?
It is best suited for low-level pulsed light sources like Cherenkov or scintillation light. - Does the device comply with environmental standards?
Yes, it is lead-free and compliant with RoHS and REACH. - What is the operating temperature range?
The range is from –40 °C to +85 °C. - What is the photon detection efficiency at 420 nm?
The PDE is more than 54% at 420 nm.
